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1

SPIE Proceedings [SPIE 1986 Quebec Symposium - Quebec City, Canada (Tuesday 3 June 1986)] Optical Testing and Metrology - Film Thickness And Refractive Index Standard Reference Material Calibrated By Ellipsometry And Profilometry

Candela, G. A., Chandler-Horowitz, D., Novotny, D. B., Vorburger, T. V., Giauque, C. H. W., Grover, Chander P.

Year:

1986

Language:

english

File:

PDF, 420 KB

english, 1986

2

[IEEE Proceedings. SOS/SOI Technology Workshop - St. Simons Island, GA, USA (3-5 Oct. 1988)] Proceedings. SOS/SOI Technology Workshop - Spectroscopic ellipsometry of oxygen-ion-implanted silicon-on-insulator annealed at different temperatures

Dutta, P., Candela, G.A., Chandler-Horowitz, D., Peckerar, M.C.

Year:

1988

Language:

english

File:

PDF, 70 KB

english, 1988

3

[IEEE 2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks - Aventura, FL, USA (24-28 July 2000)] 2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497) - AlGaAs composition measurements from in situ optical reflectance

Bertness, K.A., Armstrong, J.T., Marinenko, R.B., Robins, L.H., Paul, A.J., Pellegrino, J.G., Amirtharaj, P.M., Chandler-Horowitz, D.

Year:

2000

Language:

english

File:

PDF, 154 KB

english, 2000

4

High sensitivity attenuated total reflection Fourier transform infrared spectroscopy study of ultrathin ZrO[sub 2] films: A study of phase change

Sayan, S., Chandler-Horowitz, D., Nguyen, N. V., Ehrstein, J. R.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2008

Language:

english

File:

PDF, 469 KB

english, 2008

5

Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry

Doss, M.G., Chandler-Horowitz, D., Marchiando, J. F., Krause, S., Seraphin, S.

Journal:

MRS Proceedings

Year:

1990

Language:

english

File:

PDF, 287 KB

english, 1990

6

Numerical Modelling of Short-wavelength Internal Quantum Efficiency

Geist, J, Chandler-Horowitz, D, Köhler, R, Robinson, A M, James, C R

Journal:

Year:

1991

Language:

english

File:

PDF, 394 KB

english, 1991

7

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

G. Brill, Y. Chen, P. M. Amirtharaj, W. Sarney, D. Chandler-Horowitz, N. K. Dhar

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 793 KB

english, 2005

8

A comparison of techniques for nondestructive composition measurements in CdZnTe substrates

S. P. Tobin, J. P. Tower, P. W. Norton, D. Chandler-Horowitz, P. M. Amirtharaj, V. C. Lopes, W. M. Duncan, A. J. Syllaios, C. K. Ard, N. C. Giles, Jaesun Lee, R. Balasubramanian, A. B. Bollong, T. W.

Journal:

Journal of Electronic Materials

Year:

1995

Language:

english

File:

PDF, 1.29 MB

english, 1995

9

Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon

Nguyen, N. V., Davydov, Albert V., Chandler-Horowitz, Deane, Frank, Martin M.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 381 KB

english, 2005

10

Crystalline quality of bonded silicon-on-insulator characterized by spectroscopic ellipsometry and Raman spectroscopy

Nguyen, N. V., Maslar, J. E., Kim, Jin-Yong, Han, Jin-Ping, Park, Jin-Won, Chandler-Horowitz, D., Vogel, E. M.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 357 KB

english, 2004

11

Interdigitated hetero InGaAs/GaAs n-i-p-i modulators

W.F. Tseng, D. Chandler-Horowitz, N.A. Papanicolaou, J.B. Boos

Journal:

Materials Letters

Year:

1996

Language:

english

File:

PDF, 427 KB

english, 1996

12

SPIE Proceedings [SPIE 29th Annual Technical Symposium - San Diego (Tuesday 20 August 1985)] Micron and Submicron Integrated Circuit Metrology - Ellipsometric Metrology Of Ultrathin Films: Dual Angle Of Incidence

Chandler-Horowitz, Deane, Monahan, Kevin M.

Year:

1986

Language:

english

File:

PDF, 435 KB

english, 1986

13

SPIE Proceedings [SPIE 1984 Technical Symposium East - Arlington (Tuesday 1 May 1984)] Integrated Circuit Metrology II - An Ellipsometry System For High Accuracy Metrology Of Thin Films

Candela, George A., Chandler-Horowitz, Deane, Nyyssonen, Diana

Year:

1984

Language:

english

File:

PDF, 4.46 MB

english, 1984

14

SPIE Proceedings [SPIE San Diego '92 - San Diego, CA (Sunday 19 July 1992)] Interferometry: Surface Characterization and Testing - Effects of thin films on interferometric step height measurements

McWaid, Thomas H., Vorburger, Theodore V., Song, Jun-Feng, Chandler-Horowitz, Deane, Creath, Katherine, Greivenkamp, John E.

Year:

1992

Language:

english

File:

PDF, 263 KB

english, 1992

15

Interface Roughness-Induced Changes in the Near-E0 Spectroscopic Behavior of Short-Period AlAs/GaAs Superlattices

Chandler-Horowitz, D., Pellegrino, J.G., Nguyen, N.V., Amirtharaj, P.M., Qadri, S.B.

Journal:

MRS Proceedings

Year:

1993

Language:

english

File:

PDF, 341 KB

english, 1993

16

Strain effects on the energy bands of ZnSe films grown on GaAs substrates by spectroscopic ellipsometry

Dahmani, R., Salamanca-Riba, L., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 593 KB

english, 1994

17

Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

Dahmani, R., Salamanca-Riba, L., Beesabathina, D. P., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

Journal:

MRS Proceedings

Year:

1992

Language:

english

File:

PDF, 1.15 MB

english, 1992

18

Characterization of Structural Quality of Bonded Silicon-On-Insulator Wafers by Spectroscopic Ellipsometry and Raman Spectroscopy

Nguyen, N. V., Maslar, J. E., Kim, Jin-Yong, Han, Jin-Ping, Park, Jin-Won, Chandler-Horowitz, D., Vogel, E. M.

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 110 KB

english, 2004

19

A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements

Ehrstein, James, Richter, Curt, Chandler-Horowitz, Deane, Vogel, Eric, Young, Chadwin, Shah, Shweta, Maher, Dennis, Foran, Brendan, Hung, P. Y., Diebold, Alain

Journal:

Journal of The Electrochemical Society

Year:

2006

Language:

english

File:

PDF, 857 KB

english, 2006

20

[AIP CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY: 2003 International Conference on Characterization and Metrology for ULSI Technology - Austin, Texas (USA) (24-28 March 2003)] AIP Conference Proceedings - Assessment of Ultra-Thin SiO2 Film Thickness Measurement Precision by Ellipsometry

Chandler-Horowitz, D.

Year:

2003

File:

PDF, 387 KB

2003

21

Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface

Nguyen, N. V., Chandler-Horowitz, D., Amirtharaj, P. M., Pellegrino, J. G.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 605 KB

english, 1994

22

Determination of the optical constants of ZnSe films by spectroscopic ellipsometry

Dahmani, R., Salamanca-Riba, L., Nguyen, N. V., Chandler-Horowitz, D., Jonker, B. T.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 691 KB

english, 1994

23

SPIE Proceedings [SPIE 1982 Technical Symposium East - Arlington (Wednesday 5 May 1982)] Integrated Circuit Metrology I - Ellipsometric Accuracy And The Principal Angle Of Incidence

Chandler-Horowitz, Deane, Nyyssonen, Diana

Year:

1982

Language:

english

File:

PDF, 329 KB

english, 1982

24

Double Modulation and Selective Excitation Photoreflectance for Characterizing Highly Luminescent Semiconductor Structures and Samples with Poor Surface Morphology

Amirtharaj, P. M., Chandler-Horowitz, D., Bour, D. P.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 759 KB

english, 1995

25

[IEEE 1990 IEEE SOS/SOI Technology Conference. - Key West, FL, USA (2-4 Oct. 1990)] 1990 IEEE SOS/SOI Technology Conference. Proceedings - Sensitivity of ellipsometric modeling to the 'islands' of silicon precipitates at the bottom of the buried oxide layer in annealed SIMOX

Chandler-Horowitz, D., Marchiando, J.F., Doss, M., Krause, S., Visitserngtrakul, S.

Year:

1990

Language:

english

File:

PDF, 123 KB

english, 1990

26

Nondestructive characterization of oxygen-ion-implanted silicon- on-insulator using multiple-angle ellipsometry

Dutta, Pradip, Candela, George A., Chandler-Horowitz, Deane, Marchiando, J. F., Peckerar, Martin C.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 623 KB

english, 1988

27

Principal angle spectroscopic ellipsometry utilizing a rotating analyzer

Chandler-Horowitz, D., Candela, G. A.

Journal:

Year:

1982

Language:

english

File:

PDF, 644 KB

english, 1982

28

The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films

Hill, D. H., Bartynski, R. A., Nguyen, N. V., Davydov, Albert C., Chandler-Horowitz, Deane, Frank, Martin M.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 836 KB

english, 2008

29

The Raman Spectrum of Carbon in Silicon

Forman, R. A., Bell, M. I., Myers, D. R., Chandler-Horowitz, D.

Journal:

Japanese Journal of Applied Physics

Year:

1985

Language:

english

File:

PDF, 214 KB

english, 1985

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